Katsuhiro Akimoto, Shogo Ishizuka
págs. 4920-4922
The generation of misfit dislocations in facet-controlled growth of AlGaN/GaN films
I. Akasaki, F. A. Ponce, R. Liu, S.-L. Sahonta, D. Cherns, H. Amano
págs. 4923-4925
Structure of pentacene thin films
Alexander Kazimirov, Randall L. Headrick, George G. Malliaras, Bert Nickel, Giacinto Scoles, Hyunjung Kim, Ricardo Ruiz, Zahirul Islam, Alex C. Mayer
págs. 4926-4928
D. Hasselkamp, Th. Krämer, B. K. Meyer, B. Farangis, C. Wang, A. Polity, Y. He
págs. 4929-4931
Strain hardening and large tensile elongation in ultrahigh-strength nano-twinned copper
E. Ma, L. Lu, Y. M. Wang, K. Lu, M. L. Sui, Q. H. Lu
págs. 4932-4934
Interaction between interstitials and arsenic-vacancy complexes in crystalline silicon
Thomas F. Edgar, Gyeong S. Hwang, Scott A. Harrison
págs. 4935-4937
D. Gerthsen, A. Rosenauer, M. Schowalter, D. Lamoen, P. Kruse
págs. 4938-4940
Can correlated substitution enhance the Curie temperature in diluted magnetic semiconductors?
Josef Kudrnovský, Timothy Ziman, Georges Bouzerar
págs. 4941-4943
Plasma hydrogenation of strain-relaxed SiGe/Si heterostructure for layer transfer
R. Loo, Peng Chen, Paul K. Chu, J. W. Mayer, S. Mantl, M. Nastasi, S. S. Lau, M. Caymax, N. David Theodore, T. Höchbauer, M. Cai, T. L. Alford, D. Buca
págs. 4944-4946
Evidence of Si/SiGe heterojunction roughness scattering
Y. C. Lee, C. W. Liu, S. Maikap, J.-Y. Wei, M. H. Lee, C.-Y. Yu, P. S. Chen
págs. 4947-4949
Dual role of fluorine at the Si¿SiO<sub>2</sub> interface
S. T. Pantelides, X. J. Zhou, L. Tsetseris, R. D. Schrimpf, D. M. Fleetwood
págs. 4950-4952
Effect of encapsulation temperature on Si:P ¿-doped layers
R. G. Clark, M. Y. Simmons, K. E. J. Goh, A. R. Hamilton, L. Oberbeck
págs. 4953-4955
Efficient p-type doping of GaN films by plasma-assisted molecular beam epitaxy
T. D. Moustakas, R. L. Hervig, J. Cabalu, Wenlian Li, A. Bhattacharyya, David J. Smith
págs. 4956-4958
Interaction between organic semiconductors and LiF dopant
Z. H. Lu, S. Han, Y. Yuan, D. Grozea
págs. 4959-4961
págs. 4962-4964
Highly resistive annealed low-temperature-grown InGaAs with sub-500 fs carrier lifetimes
M. Missous, I. S. Gregory, M. J. Evans, E. H. Linfield, C. Baker, I. V. Bradley, W. R. Tribe
págs. 4965-4967
Probing electrical transport across oxide interfaces by noncontact atomic force microscopy
Rui Shao, Dawn A. Bonnell
págs. 4968-4970
Exchange bias and vertical loop shifts in a Co(32 Å)∕NiO(10 Å)∕[Co(4 Å)∕Pt(6 Å)][sub 4] multilayer
Z. Y. Liu
págs. 4971-4973
Field-tuned magnetocaloric effect in metamagnetic manganite system
V. S. Amaral, A. P. Guimarães, M. S. Reis, F. Garcia, A. M. Gomes
págs. 4974-4976
Large magnetoresistance effects near room temperature in manganite heterojunction
B. G. Shen, J. R. Sun, C. M. Xiong
págs. 4977-4979
Hall effect, magnetization, and conductivity of Fe<sub>3</sub>O<sub>4</sub> epitaxial thin films
P. Majewski, D. Reisinger, R. Gross, M. Opel, L. Alff
págs. 4980-4982
Miyoung Kim, A. J. Freeman
págs. 4983-4985
Dynamics of magnetically retained supraparticle structures in a liquid flow
M. A. M. Gijs, A. Rida
págs. 4986-4988
C. David, L. J. Heyderman, R. P. Cowburn, Harun H. Solak, D. Atkinson, F. Nolting
págs. 4989-4991
P. Padhan, P. Murugavel, W. Prellier
págs. 4992-4994
Tunable magnetization damping in transition metal ternary alloys
S. S. P. Parkin, R. H. Koch, Gang Xiao, S. Ingvarsson
págs. 4995-4997
Akihisa Inoue, Dmitri V. Louzguine, Wei Zhang
págs. 4998-5000
Y. N. Mohapatra, S. K. Sahoo, Ram S. Katiyar, Subhasish B. Majumder, D. C. Agrawal
págs. 5001-5003
Makoto Ishida, Kazuaki Sawada, Takayuki Okada, Mohammad Shahjahan
págs. 5004-5006
T. M. McCleskey, S. R. Foltyn, A. K. Burrell, G. E. Collis, Y. Li, H. Wang, Q. X. Jia, Y. Lin, Jang-Sik Lee
págs. 5007-5009
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