Applied physics letters

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  Año 2004, Vol. 84, Número 15

  • Improvement of second-harmonic generation in quantum-cascade lasers with true phase matching

    Oana Malis, Alfred Y. Cho, Alexey Belyanin, Deborah L. Sivco, A. M. Sergent, Claire Gmachl, Milton L. Peabody

    págs. 2721-2723

    

  • Ultraviolet amplified spontaneous emission from thin films of 4,4^¿-bis(9-carbazolyl)-2,2^¿-biphenyl and the derivatives

    Hiroyuki Sasabe, Chihaya Adachi, Hidetoshi Yamamoto, Hiroki Yoshizaki, Yuichiro Kawamura, Kenichi Goushi

    págs. 2724-2726

    

  • Low-threshold amplified spontaneous emission and laser emission in a polyfluorene derivative

    M. Day, Y. Tao, Y. Li, X. Liu, C. Py, J. Ding

    págs. 2727-2729

    

  • Tunable terahertz emission from difference frequency in biased superlattices

    Ren-Bao Liu, Bang-Fen Zhu

    págs. 2730-2732

    

  • Organic plastic laser in holographic materials by photopolymerization

    Alain Fort, Kokou D. Dorkenoo, Olivier Crégut

    págs. 2733-2735

    

  • Impact of spin blocking on the energy relaxation of electrons in quantum-dot lasers

    C. Cao, D. G. Deppe

    págs. 2736-2738

    

  • Microcavity lasing behavior of oriented hexagonal ZnO nanowhiskers grown by hydrothermal oxidation

    Wenjiao Lin, K. S. Wong, Huifang Xu, Mingmei Wu, Zhiren Qiu

    págs. 2739-2741

    

  • Finite size effect of transmission property for metal hole arrays in subterahertz region

    Masanori Hangyo, Fumiaki Miyamaru

    págs. 2742-2744

    

  • Role of free carriers from two-photon absorption in Raman amplification in silicon-on-insulator waveguides

    T. K. Liang, H. K. Tsang

    págs. 2745-2747

    

  • Blue GaN-based light-emitting diodes grown by molecular-beam epitaxy with external quantum efficiency greater than 1.5%

    J. S. Speck, J.-H. Liang, S. Omori, H. Tamura, D. S. Green, J. S. Brown, C. Funaoka, P. Waltereit, T. Katona, S. P. DenBaars, H. Sato, M. Kato, C. Poblenz, M. McLaurin

    págs. 2748-2750

    

  • Temperature dependence and single-mode tuning behavior of second-harmonic generation in quantum cascade lasers

    A. Belyanin, M. L. Peabody, F. Capasso, D. L. Sivco, C. Gmachl, A. Y. Cho, A. M. Sergent, N. Owschimikow

    págs. 2751-2753

    

  • Reflection/transmission confocal microscopy characterization of single-crystal diamond microlens arrays

    C. Griffin, J. M. Girkin, G. McConnell, E. Gu, H. W. Choi, C. Liu, I. M. Watson, A. M. Gurney, M. D. Dawson

    págs. 2754-2756

    

  • Performance enhancement of InGaN light-emitting diodes by laser lift-off and transfer from sapphire to copper substrate

    Bee Sim Tan, Xue Jun Kang, Shu Yuan

    págs. 2757-2759

    

  • Activation mechanism of annealed Mg-doped GaN in air

    Yow-Jon Lin

    págs. 2760-2762

    

  • Polarization switching induced by phase change in extremely short external cavity vertical-cavity surface-emitting lasers

    Rainer Michalzik, Miren Camarena, Johannes Michael Ostermann, Heiko J. Unold, Krassimir Panajotov, Mikel Arizaleta, H. Thienpont

    págs. 2763-2765

    

  • Target charging effects on proton acceleration during high-intensity short-pulse laser-solid interactions

    M. S. Wei, P. A. Norreys, P. McKenna, K. L. Lancaster, A. E. Dangor, E. L. Clark, R. G. Evans, M. Zepf, K. W. D. Ledingham, P. Gibbon, F. N. Beg, M. Tatarakis, K. Krushelnick, A. Gopal

    págs. 2766-2768

    

  • Rotating plasma discharges of high-pressure molecular vapor using circularly polarized microwaves

    Jin Joong Kim, Jung Tae Ko, Dong Ho Won, S. S. Kim, Hong-Young Chang, Jeong Won Kim

    págs. 2769-2771

    

  • Influence of the density gradient on the duration of Si-K¿ pulses generated by a double femtosecond-laser pulse

    R. Sauerbrey, A. Morak, K. Eidmann, K. Witte, U. Andiel, E. Förster, I. Uschmann, F. Pisani

    págs. 2772-2774

    

  • Strain-rate and temperature dependent plastic yield in carbon nanotubes from ab initio calculations

    Traian Dumitric¿, Boris I. Yakobson

    págs. 2775-2777

    

  • Visualization of electrochemical doping and light-emitting junction formation in conjugated polymer films

    Justin Dane, Jun Gao

    págs. 2778-2780

    

  • Strain hardening of an amorphous matrix composite due to deformation- induced nanocrystallization during quasistatic compression

    Jae-Pyoung Ahn, Sunghak Lee, Byeong-Joo Lee, Jae-Chul Lee, Yu Chan Kim

    págs. 2781-2783

    

  • Anisotropic spectroscopy of nitrogen K-edge in group-III nitrides

    Jing Zhu, Aihua Zhang, Shang-Peng Gao, Jun Yuan

    págs. 2784-2786

    

  • Thermal hysteresis in the luminescence of Cr³⁺ ions in Sr_0.6Ba_0.4 (NbO₃)₂

    Luisa E. Bausá, D. Jaque, M. O. Ramirez, M. Montes, L. Ivleva, J. Garc¿a Solé

    págs. 2787-2789

    

  • Relaxation of metallic Zr_46.75Ti_8.25Cu_7.5Ni₁₀Be_27.5 bulk glass-forming supercooled liquid

    Ping Wen, Ya Ping Huang, Wei Hua Wang, Ming Xiang Pan, Mei Li Guo, De Qian Zhao

    págs. 2790-2792

    

  • Efficient electron spin detection with positively charged quantum dots

    Thomas F. Boggess, K. C. Hall, K. Gündocdu, O. B. Shchekin, D. G. Deppe

    págs. 2793-2795

    

  • Directed nanostructural evolution in Ti_0.8Ce_0.2N layers grown as a function of low-energy, high-flux ion irradiation

    T.-Y. Lee, I. Petrov, S. Kodambaka, R. D. Twesten, J. G. Wen, J. E. Greene

    págs. 2796-2798

    

  • Compression of Ti₃Si_0.5Ge_0.5C₂ to 53 GPa

    C. S. Zha, S. K. Saxena, H. P. Liermann, M. W. Barsoum, Bouchaib Manoun, R. P. Gulve, A. Ganguly

    págs. 2799-2801

    

  • Effects of spacer thickness on quantum efficiency of the solar cells with embedded Ge islands in the intrinsic layer

    Noritaka Usami, Gen Sazaki, Toru Ujihara, Kentaro Sawano, Arnold Alguno, Yasuhiro Shiraki, Kozo Fujiwara, Kazuo Nakajima

    págs. 2802-2804

    

  • Effects of electron concentration on the optical absorption edge of InN

    J. Wu, W. Walukiewicz, A. Barcz, J. C. Ho, Hai Lu, E. E. Haller, William J. Schaff, E. R. Weber, S. X. Li, R. Jakiela, R. Armitage

    págs. 2805-2807

    

  • Optical transition in discrete levels of Si quantum dots

    F. S. Xue, X. L. Wu

    págs. 2808-2810