Hydrostatic pressure effects on the donor impurity binding energy in symmetrical GaAs/Ga0.7Al0.3As double quantum well

• Autores: A. L. Morales, C.A. Duque, N. Raigoza
• Localización: Revista de la Sociedad Colombiana de Física, ISSN-e 0120-2650, Vol. 37, Nº. 1, 2005, págs. 199-202
• Idioma: inglés
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• Resumen

  • By using the effective-mass approximation and the variational method, we calculate the effects of hydrostatic pressure on the binding energy for shallow-donor impurities in symmetrical GaAs/Ga0.7Al0.3 double quantum well structures. We consider different well and barrier widths, shallow-donor impurity positions, and hydrostatic pressures. Our results indicate that a proper knowledge of the impurity distribution inside the structure is of relevance in a quantitative compa-rison between theoretical and experimental results concerning the binding energy and optical-absorption spectra related to donor impurities in multiple quantum well systems under hydrostatic pressure.