Defect attributed variations of the photoconductivity and photoluminescence in the HVPE and MOCVD as-grown and irradiated GaN structures

• Autores: J. Vaitkus, J.-P. Faurie, A. Blue, K.M. Smith, E. Gaubas, B. Beaumont, A. Žukauskas, E. Aujol, A. Uleckas, P. Pobedinskas, P. Gibart, M. Rahman
• Localización: Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, ISSN 0168-9002, Vol. 552, Nº. 1, 2005, págs. 82-87
• Idioma: inglés
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