SnO2:F thin films deposited by RF magnetron sputtering: effect of the SnF2 amount in the target on the physical properties

• Autores: F. de Moure-Flores, A. Guillén Cervantes, K.E. Nieto-Zepeda, J.G. Quiñones-Galván, A. Hernández-Hernández, M. de la L. Olvera, M. Meléndez-Lira
• Localización: Revista Mexicana de Física, ISSN-e 0035-001X, Vol. 59, Nº. 4, 2013, págs. 335-338
• Idioma: inglés
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• Resumen

  • SnO_(2):F thin films were prepared by RF magnetron sputtering onto glass substrates using SnF_(2) as fluorine source. The films were deposited under a mixed argon/hydrogen atmosphere at a substrate temperature of 500ºC. The X-ray diffraction shows that polycrystalline films were grown with a phases mixture of SnO_(2) and SnO. The optical transmittance is between 80 and 90%. The physical properties of the films suggest that SnO_(2) tin films grown with small SnF_(2) content in the target can be considered as candidates for transparent electrodes.