Resumen de Perturbation method applied to a basic diode circuit

H. Vázquez Leal, Y. Khan, Guillermo Fernández Anaya, U. Filobello Nino, V.M. Jiménez Fernández, A. Herrera May, A. Díaz Sánchez, A. Marín-Hernández, J. Huerta-Chua

• Because of the exoinential characteristic of silicon diodes, exact solutions cannot be established when operating point and transient analysis are computed. To overcome that problem, the present work proposes a perturbation method which allows obtaining approximated analytic expressions of diode-based circuits. Simulation results show that numerical solutions obtained by using the proposed method are similar to those reported in literature, with the advantage of not requiring a user-selected arbitrary expansion point. Additionally, the method does not use the Lambert function W, reducing the proposed solution complexity, which makes it suitable for engineering applications.