Resumen de Thin-film transistors based on zinc oxide films by ultrasonic spray pyrolysis
M.A. Domínguez-Jiménez, F. Flores Gracia, Adan Luna Flores, J. Martínez-Juárez, J.A. Luna-López, S. Alcántara Iniesta, P. Rosales-Quintero, C. Reyes-Betanzo
The application of Zinc Oxide (ZnO) films by ultrasonic spray pyrolysis at 250, 300 and 450ºC as active layer in thin-film Transistors (TFTs) is presented. The performance of the devices shows as unexpected behavior in function of the depositon temperature. The ZnO films were deposited from o.2 M precursor solution of Zinc acetate in methanol, using air as carrier gas 70 nm-thick ZnO was deposited over 100 nm-thick aluminum electrodes patterned on 50 nm-thick thermally grown SiO_(2) on highly doped Si wafers. The highly doped Si wafer was used as the gate electrode. The ZnO TFTs at 250ºC shoed field-effect mobilities around of 0.05 cm^(2)/Vs and threshold voltages of 8 V.
