Raman scattering from Ge_(1-x)Sn_(x) (x </= 0.14) alloys

• Autores: Hugo Navarro Contreras, A.G. Rodríguez, M.A. Vidal, H. Pérez-Ladrón de Guevara
• Localización: Revista Mexicana de Física, ISSN-e 0035-001X, Vol. 61, Nº. 6, 2015, págs. 437-443
• Idioma: inglés
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• Resumen

  • Ge_(1-x)Sn_(x) alloys with x concentration up to 0.14 were grown on Ge(001) and GaAs(001) substrates in a conventional R. F. Magnetron Sputtering system at low substrate temperatures. The structural characteristics of these alloys were studied for different Sn concentrations between 1 to 14% by high resolution X ray diffraction, and Raman spectroscopy. Contrasting characteristics of the grown layers are observed if the Sn concentration is larger or smaller than 6% as revealed by X-ray diffraction and Raman spectroscopy.