Power cycling issues and challenges of SiC-MOSFET power modules in high temperature conditions

• Autores: A. Ibrahim, J.P. Ousten, R. Lallemand, Z. Khatir
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 58, 2016, págs. 204-210
• Idioma: inglés
• Enlaces
  • Texto completo
• Resumen

  • Abstract Silicon carbide (SiC) MOSFETs power modules are very attractive devices and are already available in the market. Nevertheless, despite technological progress, reliability remains an issue and reliability tests must be conducted to introduce more widely these devices into power systems. Because of trapping/de-trapping phenomena at the SiC/SiO2 interface that lead to the shift of threshold voltage, test protocols based on silicon components cannot be used as is, especially in high temperature conditions. Using high temperature SiC MOSFET power modules, we highlight the main experimental difficulties to perform power cycling tests. These reversible physical mechanisms preclude the use of temperature sensitive parameters (TSEP) for junction temperature measurements, so we set up fiber optic temperature sensors for this purpose. Moreover, these degradation phenomena lead to difficulties in both controlling the test conditions and seeking for reliable aging indicator parameters. Finally, a power cycling test protocol at high temperature conditions is proposed for such devices.