MoS2 transistors with 1-nanometer gate lengths

• Autores: Sujay B. Desai, Surabhi R. Madhvapathy, Juan Pablo Llinas
• Localización: Science, ISSN 0036-8075, Vol. 354, Nº 6308, 2016, págs. 100-102
• Idioma: inglés
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• Resumen

  • Scaling of silicon (Si) transistors is predicted to fail below 5-nanometer (nm) gate lengths because of severe short channel effects. As an alternative to Si, certain layered semiconductors are attractive for their atomically uniform thickness down to a monolayer, lower dielectric constants, larger band gaps, and heavier carrier effective mass. Here, we demonstrate molybdenum disulfide (MoS2) transistors with a 1-nm physical gate length using a single-walled carbon nanotube as the gate electrode. These ultrashort devices exhibit excellent switching characteristics with near ideal subthreshold swing of ~65 millivolts per decade and an On/Off current ratio of ~106. Simulations show an effective channel length of ~3.9 nm in the Off state and ~1 nm in the On state.