Synthesis of self-assembled Ge nanocrystals employing reactive RF sputtering
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A. Hernández-Hernández [1] ; L.A. Hernández-Hernández [4] ; B. Marel Monroy [5] ; J. Santoyo-Salazar [2] ; G. Santana-Rodríguez [6] ; A. Márquez-Herrera [3] ; S. Gallardo-Hernández [2] ; P.G. Mani-González [7] ; M. Meléndez-Lira [7]
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[1] Universidad Autónoma del Estado de Hidalgo
Universidad Autónoma del Estado de Hidalgo
México
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[2] Instituto Politécnico Nacional
Instituto Politécnico Nacional
México
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[3] Universidad de Guanajuato
Universidad de Guanajuato
México
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[4] Escuela Superior de F´ısica y Matematicas del Instituto Polit ´ ecnico Nacional, México
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[5] c Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de M ´ exico
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[6] Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de M ´ exico
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[7] Instituto de Ingenier´ıa y Tecnolog´ıa, Departamento de F´ısica y Matematicas, ´ Universidad Autonoma de Ciudad Ju ´ arez, Chihuahua, M ´ exico
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- Localización: Revista Mexicana de Física, ISSN-e 0035-001X, Vol. 62, Nº. 6, 2016, págs. 558-564
- Idioma: inglés
- Enlaces
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Resumen
This work presents the results of a simple methodology able to control crystal size, dispersion and spatial distribution of germanium nanocrystals (Ge-NCs). It takes advantage of a self-assembled process taken place during the deposit of the system SiO_(2)/Ge/SiO_(2) by reactive RF sputtering. Nanoparticles formation is controlled mainly by the roughness of the first SiO_(2) layer but the ulterior interaction of the interlayer with the top layer also play a role. Structural quality of germanium nanocrystals increases with roughness and the interlayer thickness. The tetragonal phase of germanium is produced and its crystallographic quality improves with interlayer thickness and oxygen partial pressure. Room temperature photoluminescence emission without a post growth thermal annealing process indicates that our methodology produces a low density of non-radiative traps.
