Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface

• Autores: Ming-Yang Li, Yumeng Shi, Chia-Chin Cheng
• Localización: Science, ISSN 0036-8075, Vol. 349, Nº 6247, 2015, págs. 524-528
• Idioma: inglés
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• Resumen

  • Two-dimensional transition metal dichalcogenides (TMDCs) such as molybdenum sulfide MoS2 and tungsten sulfide WSe2 have potential applications in electronics because they exhibit high on-off current ratios and distinctive electro-optical properties. Spatially connected TMDC lateral heterojunctions are key components for constructing monolayer p-n rectifying diodes, light-emitting diodes, photovoltaic devices, and bipolar junction transistors. However, such structures are not readily prepared via the layer-stacking techniques, and direct growth favors the thermodynamically preferred TMDC alloys. We report the two-step epitaxial growth of lateral WSe2-MoS2 heterojunction, where the edge of WSe2 induces the epitaxial MoS2 growth despite a large lattice mismatch. The epitaxial growth process offers a controllable method to obtain lateral heterojunction with an atomically sharp interface.