Measurements are being made of the performance of germanium transistors when they are cooled several tens of degrees below normal.
Cooling the case of one junction transistor to 0ºC allows it to work 4 times the power level. Collector current with open circuit emitter falls with temperature especially in the case of drift transistors. Current rise times in response to an applied step voltage are sharpened.
Cooling can be done by normal methods but the use of the Peltier effect in semiconductor material (not the transistor itself) has been found convenient.
The work is entirely exploratory but with the possibility of.
a) Saving components by up-rating power transistors, and making some types switch faster.
b) Increasing operating and shelf lives (by reducing diffusion rates in the germanium)
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