Innovative conception of SiC MOSFET-Schottky 3D power inverter module with double side cooling and stacking using silver sintering

• Autores: M. Barrière, A. Guédon-Gracia, E. Woirgard, S. Bontemps, F. Le Henaff
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 76-77, 2017, págs. 431-437
• Idioma: inglés
• Texto completo no disponible (Saber más ...)
• Resumen

  • Abstract In this paper, authors developed an innovative packaging for a power inverter SiC MOSFET-Schottky. The design, composed by 6 SiC-MOSFET and 6 SiC-Schottky diodes, places dice between 2 direct-bonding-copper substrates, it was optimized to equilibrate thermal repartition on the two DBC surfaces. We purpose to increase thermal dissipation of power modules by the use of two water-cooling blocks disposed on top and on the bottom of our power inverter; it permits to use both sides of power module to dissipate heat flux. According to Finite Element Method simulations performed with ANSYS®, double side cooling permits to enhance by up to two times thermal dissipation. Moreover solders are replaced by silver sintering and wire-bonds are suppressed by top substrate connections. We want to highlight that those improvements participates to increase reliability of power modules.