Short-circuit robustness test and in depth microstructural analysis study of SiC MOSFET

• Autores: S. Mbarek, P. Dherbécourt, O. Latry, Francis Fouquet
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 76-77, 2017, págs. 527-531
• Idioma: inglés
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• Resumen

  • Abstract The purpose of this paper is to describe an approach of short circuit ageing allowing further microstructural analysis that is needed for the identification of failure mechanisms. So far, few relevant studies on SiC MOSFET SC robustness tests have been described putting in light the need for complementary information on physical mechanisms involved in failure modes. A large part of this work is dedicated to a new approach of SC robustness tests. Following ageing, using PEM (Photo Emission Microscopy) technique, SEM (Scanning Electronic Microscopy), and FIB (Focus Ion Beam) cutting, the study successfully correlates electrical measurements and structural analyses for an elementary cell of SiC MOSFET power transistor.