Resumen de A numerical method for solving the physics-based model of IGBT with all free-carrier injection conditions in the base region

Jiajia Chen, Yuhan Ma, Shiyou Yang

• Purpose The purpose of this paper is to provide an accurate model and method to simulate the transient performances of an insulated gate bipolar transistor (IGBT) in an arbitrary free-carrier injection condition.

  Design/methodology/approach A numerical model and method for solving the physics-based model, an ambipolar diffusion equation-based model, of an IGBT is proposed.

  Findings The results of the proposed model are very close to the tested ones.

  Originality/value A mathematical model for an IGBT considering all free-carrier injection conditions is introduced, and a numerical solution methodology is proposed.