Thermoelectrical modelling and simulation of devices based on VO2

• Autores: László Pohl, Soma Ur, János Mizsei
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 79, 2017, págs. 387-394
• Idioma: inglés
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• Resumen

  • Abstract Limits of development of conventional silicon-based integrated circuits get closer. More and more effort is done to develop new devices for integrated circuits. A promising structure is based on the semiconductor-to-metal phase change of vanadium-dioxide at about 67 °C. In these circuits the information is carried by combined thermal and electrical currents. For device modelling and circuit design, accurate distributed electro-thermal transient simulation is mandatory. This paper is the first one to present an electro-thermal transient simulation method for VO2 devices operating in real-world conditions. The paper presents three VO2 material models, the algorithmic extension of an electro-thermal field simulator to be able to handle hysteresis and the transient simulation issues of VO2 and the modelling of VO2 based devices. The paper compares measured and simulated device characteristics.