Asymmetric resistive switching behaviour in a Au/a-C: Co/Au planar structure

• Autores: D. Zhang, T.R. Li, J.W. Zhou, Y.C. Jiang, Bing Ren, Y.J. Huang, J.M. Zhang, L. Wang, J. Gao, L.J. Wang
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 87, 2018, págs. 52-56
• Idioma: inglés
• Texto completo no disponible (Saber más ...)
• Resumen

  • Using a simple fields induced mass motion method, Au/a-C:Co/Au planar structures with micro-gap Au electrodes were fabricated. Asymmetric current-voltage characteristics and resistive switching behaviours were observed in these cells. Reliable performance, with a reasonable ON/OFF ratio of >4, stable endurance of >200 cycles, and good retention of >105 s, were achieved at the read voltage of −3.6 V. Space charge limited current (SCLC) theory with an asymmetric potential barrier caused by different densities of traps was proposed to explain the asymmetric resistive switching behaviour.