Planar waveguides produced by implanting Si and C ions in rutile

• J. Mejía ^[1] ; E. Flores-Romero ^[1] ; R. Trejo-Luna ^[1] ; J. Rickards ^[1]
  1. [1] Universidad Nacional Autónoma de México

     Universidad Nacional Autónoma de México

     México

     
• Localización: Revista Mexicana de Física, ISSN-e 0035-001X, Vol. 64, Nº. 3, 2018, págs. 251-253
• Idioma: inglés
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• Resumen

  • Planar waveguides were generated in samples of rutile crystal (TiO_(2)) by bombarding with two types of ion: silicon and carbon. Rutile is used because of its anisotropic properties, particularly its birefringence. The guide is generated due to damage caused by the ions in the cristal which change its index of refraction. Three parameters were used: the implantation ion energy, the implantation fluence, and the orientation of the crystallographic planes. The refractive index profile of the irradiated sample was calculated and together with the value of the optical barrier the comparison was made between the different waveguides generated.