Resumen de Stability and robustness of InAlGaN/GaN HEMT in short-term DC tests for different passivation schemes

M. Oualli, C. Dua, O. Patard, P. Altuntas, S. Piotrowicz, P. Gamarra, C. Lacam, J.-C. Jacquet, L. Teisseire, D. Lancereau, E. Chartier, C. Potier, S. L Delage

• On-wafer short term step-stress tests were carried out to evaluate InAlGaN/GaN HEMT devices. Three types of transistor were studied, each one having a specific two dielectric layer passivation. The results of these tests demonstrate that the upper layer of the passivation has a strong impact on the ageing of the devices. When the upper layer is an Al2O3 Atomic Layer Deposited one, the transistors show a better stability of their electrical parameters than those passivated with the other stacks.