Electrically induced physical damage (EIPD) cases study: From electrical overstress (EOS) to product defects

• Autores: Chunlei Wu
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 88-90, 2018, págs. 203-207
• Idioma: inglés
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• Resumen

  • For identifying the real failure root cause of so called EOS cases, a new term “Electrically Induced Physical Damage (EIPD)” has been published by JEDEC JEP174 in 2016. In JEP174, the failure root cause of EIPD could not be determined as EOS simply any more without enough proofs, which released more chances to reveal the real failure root cause: EOS or products defects. In this paper, a general EIPD cases study method was illustrated. In case study section, EOS was treated as the failure root cause by mistake at first for two cases with EIPD signatures, but after further failure analysis implemented, the product defects were identified from the original EIPD signatures. So the failure mechanisms about two cases were clarified and some product defects instead of EOS were identified as the failure root cause finally. These two cases should be good examples to show how to identify the product defects in so called EOS cases.