Failure signature analysis of power-opens in DDR3 SDRAMs

• Autores: Tan Li, Hosung Lee, Geunyong Bak, Sanghyeon Baeg
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 88-90, 2018, págs. 277-281
• Idioma: inglés
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• Resumen

  • Open defects in power pins can only be diagnosed indirectly, and these diagnoses are a challenging task in failure analysis due to the failure signature's aliasing to other issues. Open defects cannot be detected by traditional DC-type test methods and can remain a potential risk in stressful device operation. In this work, error signatures in power open faults are experimentally probed to better understand electrical signatures induced by power-open. The power open faults are intentionally injected into a DDR3 SDRAM test platform. The power network inside the DDR3 SDRAM is experimentally found to be asymmetrical. Power-open defects in one power pin produce a range of power noise (0–65 mV), depending on the location of the power pin.