Dynamics of electron transfer between two adjacent channels as calculated by an ensemble Monte Carlo method

• I.C. Kizilyalli ^[1] ; K. Hess ^[1] ; G.J. Iafrate ^[1] ; D. Smith ^[1]
  1. [1] University of Illinois at Urbana Champaign

     University of Illinois at Urbana Champaign

     Township of Cunningham, Estados Unidos

     
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 6, Nº 2, 1987, págs. 93-97
• Idioma: inglés
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• Resumen

  • The dynamical characteristics of electron transfer between two channels are elucidated by using a many‐particle Monte Carlo model with self‐consistent electric fields. The study has been performed to assess switching speeds associated with various novel devices such as velocity modulation transistors and dual channel high electron mobility transistors. Typical time constants for a one micrometer device (0.4 µm gate length) are 3.5 psec for the longitudinal (source‐to‐drain) and 0.2 psec for the transport perpendicular to the interfaces between the two channels.