The moments of the boltzmann trasport equation as applied to the gallium arsenide permeable base transistor

• J.P. Kreskovsky ^[1] ; M. Meyyappan ^[1] ; H.L. Grubin ^[1]
  1. [1] Scientific Research Associates, USA
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 6, Nº 2, 1987, págs. 99-105
• Idioma: inglés
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• Resumen

  • Solutions to the first three moments of the Boltzmann transport equation and Poisson's equation are obtained for a permeable base transistor (PBT) using linearized, block implicit (LBI) and ADI techniques. Two level electron transfer is considered. The results of the simulations are compared to results obtained from the drift and diffusion equations. The comparison indicates that nonequilibrium transport and velocity overshoot are important in the PBT. The predicted I‐V characteristics of the device show substantially higher current levels and a higher cutoff frequency are obtained with the moment equations.