The extraction of terminal charges from two-dimensional device simulations of mos transistors

• E.J. Prendergast ^[1] ; P. Lloyd ^[1] ; H. Dirks ^[1]
  1. [1] AT&T Bell Laboratories, USA
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 6, Nº 2, 1987, págs. 107-114
• Idioma: inglés
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• Resumen

  • Quasi‐static models of n‐terminal semiconductor devices usually express terminal currents as the sum of steady‐state and transient components. We consider here the formulation where these transient components are assumed to be time derivatives of charges associated with the terminals and these charges are completely specified by the terminal voltages applied to the device. This paper describes a method for extracting these terminal charges from two‐dimensional device simulations of MOS transistors. The technique was used to obtain terminal charges for an n‐channel MOS transistor and some results are presented. In addition, charge tables were generated and used in a table model for MOS transistors. The transient behavior of a circuit using this table model is compared with a physical time‐domain simulation.