Resumen de A viscoelastic bem for modeling oxidation

Thye Lai Tung, Jerome Connor, Dimitri A. Antoniadis

• A viscoelastic boundary element method has been developed to model the motion of silicon dioxide and silicon nitride during thermal oxidation of silicon. This technique uses Kelvin's solution reformulated according to the correspondence principle on viscoelasticity. Constant‐velocity loading is chosen to ensure smooth variations in displacement and stress behavior for a wide range of relaxation times.