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On the well-posedness of the two-dimensional hydrodynamic model for semiconductor devices

    1. [1] Oregon State University

      Oregon State University

      Estados Unidos

  • Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 9, Nº 1, 1990, págs. 45-57
  • Idioma: inglés
  • Enlaces
  • Resumen
    • Some results concerning the well‐posedness of the hydrodynamic model of semiconductor devices in two dimensions are given. We show the non‐ellipticity of the stationary model; give representations which exhibit its elliptic and hyperbolic components, and obtain some appropriate boundary conditions from an examination of the time‐dependent problem.


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