Marruecos
Arrondissement de Nantes, Francia
Electrical potentials in a junction field transistor can be calculated using a simplified model based on a complete depletion assumption. This gives rise to a free boundary problem. We show here how we can approximate this problem with a quasi-variational inequality technique and the shape optimization method. A detailed analysis of these methods is presented. Using some numerical experiments we compare our results with the solution of the discrete drift-diffusion system, accomplished with a Gummel-like algorithm. The numerical results suggest that the methods proposed here work successfully and that the shape optimization technique provides a reasonably free boundary without excessive iterations
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