Determination of the barrier height of P t − Ir Schottky nano-contacts on Al-doped ZnO thin films by conductive Atomic Force Microscopy

• J. Eduardo Rivera L.ª ^[1] ; N. Muñoz-Aguirre ^[1] ; G Juliana Gutiérrez-Paredes ^[1] ; P.A. Tamayo-Meza ^[1] ; Alejandro A. Zapata ^[1] ; L. Martínez-Meza ^[1]
  1. [1] Instituto Politécnico Nacional

     Instituto Politécnico Nacional

     México

     
• Localización: Revista Mexicana de Física, ISSN-e 0035-001X, Vol. 64, Nº. 6, 2018, págs. 655-661
• Idioma: inglés
• Enlaces
  • Texto completo
• Resumen

  • By means of the I-V characteristics measured at room temperature, the height of the Schottky barrier established by the conductive P t − Ir tip of an Atomic Force Microscope on the aluminum doped ZnO thin films were estimated in the range of 0.58 − 0.64 eV. The ideality factors were in the range of 2.11 − 1.39, respectively. These values are in accordance with those reported by other authors that measured the height of the Pt Schottky barrier on ZnO by means of several methods. The procedure detailed in this work suggests that the scanning time for obtaining I-V Schottky characteristics is of the order of 2 ms.