Characterization of high mobility inverted coplanar Zinc Nitride thin-film transistors

• M.A. Domínguez ^[1] ; J.L. Pau ^[2] ; O. Obregón ^[1] ; A. Luna ^[1] ; A. Redondo-Cubero ^[2]
  1. [1] Benemérita Universidad Autónoma de Puebla

     Benemérita Universidad Autónoma de Puebla

     México

     
  2. [2] Universidad Autónoma de Madrid

     Universidad Autónoma de Madrid

     Madrid, España

     
• Localización: Revista Mexicana de Física, ISSN-e 0035-001X, Vol. 65, Nº. 1, 2019, págs. 10-13
• Idioma: inglés
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• Resumen

  • In this work, high mobility thin-film transistors based on zinc nitride (Zn_(3)N_(2)) sputtered at room temperature using spin-on glass (SOG) as gate dielectric are presented. The inverted coplanar structure is used for the Zn_(3)N_(2) thin-film transistors. The devices exhibit an on/off-current ratio of 10^(6) and a subthreshold slope of 0.88 V/decade. The extracted field-effect mobility was 15.8 cm^(2) /Vs which is among the highest reported for Zn_(3)N_(2) thin-film transistors. In addition, n-type MOS capacitors were fabricated and characterized by capacitance-voltage and capacitance-frequency measurements to evaluate the dielectric characteristics of the SOG film.