Inhibition grain growth and electrical properties by adding In2O3 to SnO2-Co3O4-Ta2O5 ceramics

• M. Olvera-Sánchez ^[1] ; M.B. Hernández ^[1] ; S. García-Villarreal ^[2] ; E. Rodríguez ^[1] ; C. Gómez-Rodríguez ^[3] ; L.V. García-Quiñonez ^[4] ; J.A. Aguilar-Martínez ^[1]
  1. [1] Universidad Autónoma de Nuevo León

     Universidad Autónoma de Nuevo León

     México

     
  2. [2] Universidad Autónoma de Coahuila

     Universidad Autónoma de Coahuila

     México

     
  3. [3] Universidad Autónoma de Apodaca, Nuevo León, México
  4. [4] Universidad Politécnica de García, Nuevo León, México

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• Localización: Revista Mexicana de Física, ISSN-e 0035-001X, Vol. 65, Nº. 1, 2019, págs. 25-30
• Idioma: inglés
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• Resumen

  • In this contribution, the effect of In_(2)O_(3) additions on the microstructure, physical and electrical properties of the Sn_(2)-Co_(3)O_(4)-Ta_(2)O_(5) ceramic system was investigated. Because the effect of In_(2)O_(3) has been studied typically at low levels, special attention has been paid to the effect of high levels (1 and 2 mol % In_(2)O_(3)) in the ceramics. Results show that up to 0.1 mol % In_(2)O_(3), an increase of indium oxide content is correlated with grain size reduction and an increase of the nonlinearity coefficient (α) and breakdown voltage (EB), producing an augmentation by a factor of 2 in the nonlinearity coefficient and an increment by a factor of 8 in the breakdown voltage. However, shrinkage (γ) and measured density are not influenced by the addition of indium oxide. For samples with 1 and 2 mol % In_(2)O_(3), in non-calcined condition, In_(2)O_(3) is present with cubic structure. However, in calcined specimens, In_(2)O_(3) is not detected anymore and son_(2)-crystal structure undergoes a change from tetragonal to cubic. These ceramic samples exhibit high resistivity, behaving like dielectric materials.