Applications I: Electronic Devices Based on Nanostructures
- Autores: Raúl José Martín Palma, José Manuel Martínez Duart
- Localización: Nanotechnology for Microelectronics and Photonics / Raúl José Martín Palma (aut.), José Manuel Martínez Duart (aut.), 2017, ISBN 9780323461764, págs. 199-220
- Idioma: inglés
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Resumen
This chapter introduces several electronic devices that take advantage of low-dimensional structures and the corresponding quantum size effects to improve the overall performance of traditional diodes and transistors. In particular, the principles of operation of high-electron-mobility transistors (or modulation-doped field-effect transistors) will be analyzed. Other devices that were designed aiming at operating at higher frequencies are also presented, i.e., heterojunction bipolar transistors and hot-electron transistors. Furthermore, the resonant tunneling effect, showing zones of negative differential resistance, as well as devices that base their operation in this effect, namely resonant-tunneling diodes and resonant-tunneling transistor, will be discussed. The fundamentals of single-electron transistors, based on the Coulomb blockade effect, will be also described. Finally, the basis of some key spintronic devices will be examined, including the spin valve.
