Physical properties of reactive RF sputtered a-IZON thin films

• J.J. Ortega ^[1] ; C.R. Escobedo-Galván ^[2] ; F. Avelar-Muñoz ^[1] ; A.A. Ortiz-Hernández ^[3] ; H. Tototzintle-Huitle ^[1] ; C. Falcony ^[2] ; J.J. Araiza ^[1]
  1. [1] Universidad Autónoma de Zacatecas

     Universidad Autónoma de Zacatecas

     México

     
  2. [2] Instituto Politécnico Nacional

     Instituto Politécnico Nacional

     México

     
  3. [3] Universidad Politécnica de Zacatecas

     Universidad Politécnica de Zacatecas

     México

     

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• Localización: Revista Mexicana de Física, ISSN-e 0035-001X, Vol. 65, Nº. 2, 2019, págs. 133-138
• Idioma: inglés
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• Resumen

  • The physical properties of amorphous indium zinc oxynitride (a-IZON) thin films, which were deposited at room temperature by reactive RF magnetron sputtering, were investigated. The results of the investigations indicated that the a-IZON films possessed excellent qualities: high transparency with a very low resistivity from 10^(−3) Ω•cm to 10^(−4) Ω•cm, while the carrier concentration showed values over 1020 cm^(−3) with mobility between 10 and 21 cm^(2) • V^(−1) • s^(−1) . The incorporated nitrogen reduces the typical crystallization of IZO and favors the deposition of transparent thin films. These results show that the IZON is an ideal amorphous material for applications in transparent and flexible optoelectronic devices.