Deposit of AlN thin films by nitrogen reactive pulsed laser ablation using an Al target

• F. Chale-Lara ^[1] ; M. Zapata-Torres ^[1] ; F. Caballero-Briones ^[1] ; W. De la Cruz ^[2] ; N. Cruz González ^[3] ; C. Huerta-Escamilla ^[2] ; M.H. Farías ^[2]
  1. [1] Instituto Politécnico Nacional

     Instituto Politécnico Nacional

     México

     
  2. [2] Universidad Nacional Autónoma de México

     Universidad Nacional Autónoma de México

     México

     
  3. [3] CONACyT-Instituto Politécnico Nacional, Ciudad de México, México

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• Localización: Revista Mexicana de Física, ISSN-e 0035-001X, Vol. 65, Nº. 4, 2019, págs. 345-350
• Idioma: inglés
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• Resumen

  • We report the synthesis of AlN hexagonal thin films by pulsed laser ablation, using Al target in nitrogen ambient over natively-oxidized Si (111) at 600°C. Composition and chemical state were determined by X-ray photoelectron spectroscopy (XPS); while structural properties were investigated using X-ray diffraction (XRD). High-resolution XPS spectra present a gradual shift to higher binding energies on the Al2ppeak when nitrogen pressure is incremented, indicating the formation of the AlN compound. At 30 mTorr nitrogen pressure, theAl2p peak corresponds to AlN, located at 73.1 eV, and the XRD pattern shows a hexagonal phase of AlN. The successful formation of the AlN compound is corroborated by UV-Vis reflectivity measurements.