Low-frequency noise measurements in silicon power MOSFETs as a tool to experimentally investigate the defectiveness of the gate oxide

• Autores: Paolo Magnone, Pier Andrea Traverso, Giacomo Barletta, Claudio Fiegna
• Localización: Instrumentation ViewPoint, ISSN-e 1886-4864, Nº. 14, 2013
• Idioma: inglés
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