Argelia
The aim of this paper is to investigate the description of the q-deformed multiple-trapping equation for charge carrier transport in amorphous semiconductors. We first modify the multiple-trapping model of charge carriers in amorphous semiconductors from time-of-flight transient photo-current in the framework of the q-derivative formalism, and then we construct our simulated current by using an approach based on the Laplace method. It is implemented in a program proposed recently by [14] which allows us to construct a current using the Padé approximation expansion. Furthermore, we study the influence of the parameter q of the q-calculus formalism on the drift mobility.
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