Solutions of q-deformed multiple-trapping model (MTM) for charge carrier transport from time-of-flight transient (TOF) photo-current in amorphous semiconductors

• F. Serdouk ^[1] ; A. Boumali ^[1] ; A. Makhlouf ^[2] ; M. L. Benkhedir ^[1]
  1. [1] Université Larbi Tebessi

     Université Larbi Tebessi

     Argelia

     
  2. [2] Université Larbi-Tébessi, Tébessa, Algeria / Université de Haute Alsace, Mulhouse, France
• Localización: Revista Mexicana de Física, ISSN-e 0035-001X, Vol. 66, Nº. 5, 2020, págs. 643-655
• Idioma: inglés
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• Resumen

  • The aim of this paper is to investigate the description of the q-deformed multiple-trapping equation for charge carrier transport in amorphous semiconductors. We first modify the multiple-trapping model of charge carriers in amorphous semiconductors from time-of-flight transient photo-current in the framework of the q-derivative formalism, and then we construct our simulated current by using an approach based on the Laplace method. It is implemented in a program proposed recently by [14] which allows us to construct a current using the Padé approximation expansion. Furthermore, we study the influence of the parameter q of the q-calculus formalism on the drift mobility.