Intermixing in InAsP/InP quantum wells induced by dry etching processes

• V. Hortelano ^[1] ; A. Torres ^[1] ; M. Sanz ^[1] ; J. Jiménez ^[1] ; O. Martínez ^[1] ; J. P. Landesman ^[2]
  1. [1] Universidad de Valladolid

     Universidad de Valladolid

     Valladolid, España

     
  2. [2] Université Rennes
• Localización: Proceedings of the 2013 Spanish Conference on Electron Devices / Héctor García (aut.), Helena Castán Lanaspa (aut.), 2013, ISBN 9781467346665
• Idioma: inglés
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• Resumen

  • InP ridge waveguides with different dimensions, height and width, were fabricated by inductively coupled plasma etching. The InP raw material was provided of nine buried InAsP quantum wells with variable composition and at different depths, in order to study the damage produced in the structure by the dry etching process. The etched guides were studied by spectrally resolved cathodoluminescence. The changes induced in the quantum wells by different etching chemistries were analyzed. Other parameters as the etching time, and guide dimensions were considered.