Analysis of crossover point and threshold voltage for triple gate MOSFET
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Dheeraj Sharma [1] ; Santosh Vishvakarma [1]
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[1] Indian Institute of Technology
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- Localización: Proceedings of the 2013 Spanish Conference on Electron Devices / Héctor García (aut.), Helena Castán Lanaspa (aut.), 2013, ISBN 9781467346665
- Idioma: español
- Texto completo no disponible (Saber más ...)
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Resumen
In this paper, we have analyzed for the first time that the body potential versus gate voltage characteristic curves for device having equal channel length but different body widths pass through a single common point called as `crossover point', for triple gate (TriG) MOSFET. We have found that at this crossover point, there is no potential drop from body center to the surface in the Si body. However, there is potential variation along the channel length. The value of crossover point increases with decreasing value of channel length for short channel devices. However, for long channel devices there is no such crossover point. Using the concept of crossover point, we have justified that in case of surface potential based definition, the threshold voltage changes anomalously with the body thickness variation for different channel lengths.
