Karam Awawdeh, Juan Antonio Jiménez Tejada, Pilar López Varo, J.A. López Villanueva, M. J. Deen
In this work, we propose a procedure to extract information of the trapping processes that occur in organic thin film transistors (OTFTs) during hysteresis mechanisms. The procedure is based on a compact model that describes the transistor as the combination of an intrinsic transistor and the contact regions. The model is used to extract output characteristics for the intrinsic transistor from experimental measurements. It eliminates the effect of the contacts, not only from the gate-and drain-terminal voltages, but also from fundamental parameters such as the mobility and the threshold voltage. Other models that consider the contact effects in a partial way are analyzed and the results compared to those from the proposed procedure.
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