A simple compact model for the junctionless Variable Barrier Transistor (VBT)

• Oana Moldovan ^[1] ; François Lime ^[1] ; Bogdan Nae ^[1] ; Benjamin Iñiguez ^[1]
  1. [1] Universitat Rovira i Virgili

     Universitat Rovira i Virgili

     Tarragona, España

     
• Localización: Proceedings of the 2013 Spanish Conference on Electron Devices / Héctor García (aut.), Helena Castán Lanaspa (aut.), 2013, ISBN 9781467346665
• Idioma: español
• Texto completo no disponible (Saber más ...)
• Resumen

  • In this paper we present a simple compact model for the computation of the drain current in a new type of transistor, a junctionless VBT (Variable Barrier Transistor).A good agreement between our results and two TCAD simulation tools (COMSOL and ATLAS), proves the accuracy of this model. It is the first time that a compact drain current model is derived for this type of transistor.