Effects of Ozone pre-deposition treatment on GaSb MOS capacitors

• Zhen Tan ^[1] ; Lianfeng Zhao ^[1] ; Ning Cui ^[1] ; Jing Wang ^[1] ; Jun Xu ^[1]
  1. [1] Tsinghua University

     Tsinghua University

     China

     
• Localización: Proceedings of the 2013 Spanish Conference on Electron Devices / Héctor García (aut.), Helena Castán Lanaspa (aut.), 2013, ISBN 9781467346665
• Idioma: español
• Texto completo no disponible (Saber más ...)
• Resumen

  • GaSb metal-oxide-semiconductor capacitors (MOSCAPs) with Ozone pre-deposition treatment at various temperatures are studied. It is found that Ozone treatment can improve the characteristics of High-k/GaSb MOSCAPs. The Interface Trap Density (Dit) is reduced by 50% after Ozone pre-deposition treatment at 200°C, and gate leakage current is reduced by around 70% after Ozone treatment at 100°C.