Impact of AlN interlayer on the electronic and I-V characteristics of In_(0.17)Al_(0.83)N/GaN HEMTs devices (6 pages)

• A. Douara ^[2] ; A. Rabehi ^[3] ; O. Baitiche ^[1]
  1. [1] University of Laghouat

     University of Laghouat

     Argelia

     
  2. [2] Tissemsilt University, Algeria.
  3. [3] Université Djillali Liabès de Sidi Bel Abbès, Algeria

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• Localización: Revista Mexicana de Física, ISSN-e 0035-001X, Vol. 69, Nº. 3, 2023
• Idioma: inglés
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• Resumen

  • Here, we study a simulation model of In_(0.17)Al_(0.83)N/GaN passivated high electron mobility transistors (HEMTs) on SiC substrate. The research focused systematically on the effect of AlN interlayer on the electronic and electric characteristics. The 2D-electron gas density of In_(0.17)Al_(0.83)N/AlN/GaN HEMTs is investigated through the dependence on various AlN layer thickness. We report calculations of I-V characteristics, with 1.5 nm AlN thickness. We find the highest maximum output current of 1.81 A/mm at Vgs = 1 V, and more than 450 mS/mm as a transconductance peak. The Results are in agreement with experimental data.