TCAD 2D numerical simulations for increasing efficiency of AlGaAs – GaAs Solar Cells
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[1] Universidad Nacional de Chimborazo
Universidad Nacional de Chimborazo
Riobamba, Ecuador
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[2] Universidad Tecnológica de Panamá
Universidad Tecnológica de Panamá
Panamá
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[3] Escuela Superior Politécnica de Chimborazo
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- Localización: Revista de I+D Tecnológico, ISSN-e 2219-6714, ISSN 1680-8894, Vol. 14, Nº. 2, 2018 (Ejemplar dedicado a: Revista de I+D Tecnológico), págs. 96-107
- Idioma: español
- Enlaces
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Resumen
The performance of solar cells has improved quickly in recent years, the latest research focuses on thin cells, multijunction cells, solar cells of the group III-V compounds, Tandem cells, etc. In the present work, numerical simulations are developed, using SENTAURUS TCAD as a tool, in order to obtain a solar cell model based on Galium Arsenide (GaAs). This solar cell corresponds to the so-called "Thin Films" due to the fact that can make layers thinner than we would have if we work with conventional semiconductors, such as; Silicon or Germanium; thus opening the possibility of placing the cell as a top layer within a tandem solar cell configuration with compounds of group III-V. That is why two types of simulations are performed with respect to the contact of the rear contact; one corresponds to the cell with a lower contact equal to the length of the cell and the other with a small contact of 5 μm. In addition, the cell undergoes an optimization process by modifying the geometry and doping of the layers that comprise it, in order to improve its performance. To achieve this objective, the initial conditions and the appropriate simulation parameters must be determined, which have been selected and corroborated with the literature, allowing us to arrive at coherent results and optimal models of solar cell design through numerical simulations.
