Valencia, España
This article presents the implementation of the Micro Transfer Printing (MTP) hybridization technique, which involves the integration of passive Si3N4 technology and III-V semiconductor coupon using a micro-fabrication process flow. The key aspects of the technique include the encapsulation of Si3N4 waveguide using an interlayer dielectric (ILD), the creation of an amorphous Silicon (a-Si) layer for the passive/active coupling, or the optimizationof benzocyclobutene (BCB) deposition for the active coupon adhesion. Also, in the active coupon the optimization of the InAlAs sacrificial layer etch recipe is addressed. The propagation loss of the passive layer was measured using OFDR techniques, and improvements were observed in the taper and widen sections. The final prove of concept demonstration of MTP coupon release and print on the passive layer was achieved, and the interaction of those was demonstrated using OFDI reflectometry.
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