Resumen de Silicon nanoclusters-based light sources
Many basic principles of nature have to be reinvented at the nano-scale. Silicon nanoclusters represent the most promising approach for the obtaining of efficient light-emitting devices with CMOS-compatible technology.
Starting from the fundamental theoretical models that describe the optical and electrical properties of silicon nanoclusters, this thesis presents a complete technological development of a CMOS compatible light-emitting device. This is achieved in two phases: ¿ First, four different optically active materials based on silicon nanoclusters are developed using different obtaining techniques. The analysis of the structural characterization results of the silicon-enriched materials allows establishing a common behaviour trend for materials based on silicon nanoclusters.
¿ In a second step a CMOS-compatible technology is designed in order to use the developed material for the fabrication of light-emitting devices. Capacitive devices are fabricated and characterized electrically. Finally, the electroluminescent properties of the devices are analyzed. Two different operating regimes are identified and correlated with the electrical characteristics of the devices.
As a conclusion a brief qualitative model that coordinates all results is presented.
