Metal Deposition on Silicon from Fluoride Solution.

• Autores: Pablo Ignacio Gorostiza Langa
• Directores de la Tesis: Joan Ramon Morante i Lleonart (dir. tes.), Fausto Sanz Carrasco (dir. tes.)
• Lectura: En la Universitat de Barcelona ( España ) en 2002
• Idioma: inglés
• Tribunal Calificador de la Tesis: Albert Cornet i Calveras (presid.), Alejandro Pérez Rodríguez (secret.), Franco Decker (voc.), Pere Lluis Cabot Juliá (voc.), Philippe Aliongue (voc.)
• Materias:
  • Física
    • Química física
    • Física del estado sólido
      • Semiconductores
• Enlaces
  • Tesis en acceso abierto en: TDX
• Resumen

  • Metallic deposits can be produced on the surface of silicon crystals by immersion in aqueous solutions containing fluoride and the metallic ions. This work aims to elucidate the general mechanism of the deposition process, based on "in situ" electrochemical measurements under potentiostatic control and "ex situ" microscopic and spectroscopic techniques. The mechanism developed takes into account the classical concepts of semiconductor electrochemistry, as well as the recent advances in the understanding of silicon chemistry. The consequences of this study and its technological applications are also discussed.