Applied physics letters

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  Año 2004, Vol. 85, Número 21

  • Effects of annealing temperature on electrical resistance of bonded n-GaAs wafers

    Ji-Hao Cheng, H. Ouyang, YewChung Sermon Wu, Cheng Lun Lu, Po Chun Liu

    págs. 4831-4833

    

  • Finite-width waveguide and waveguide intersections for self-collimated beams in photonic crystals

    Fuhua Yang, Haibo Chen, Zhaofeng Li, Songlin Feng, Zhitang Song

    págs. 4834-4836

    

  • Phase locking in a fiber laser array with varying path lengths

    Yi Zhou, Y. C. Chen, Fanting Kong, Liping Liu, Kotik K. Lee

    págs. 4837-4839

    

  • Self-pulsation and optical injection locking for multielectrode distributed feedback lasers using phase-shift-induced modes

    Yasunori Tokuda, Tetsuya Nishimura, Satoshi Nishikawa, Mitsunobu Gotoda

    págs. 4840-4841

    

  • Mask pattern transferred transient grating technique for molecular-dynamics study in solutions

    David T. Wei, Zhaoyu Zhang, Koichi Okamoto, Axel Scherer

    págs. 4842-4844

    

  • Mechanically tunable photonic crystal structure

    Wounjhang Park, Jeong-Bong Lee

    págs. 4845-4847

    

  • Dramatic effects of hole transport layer on the efficiency of iridium-based organic light-emitting diodes

    Ying Wang

    págs. 4848-4850

    

  • 1.3 ¿m InGaAs vertical-cavity surface-emitting lasers with mode filter for single mode operation

    V. Oscarsson, M. Ghisoni, P. Sundgren, R. Marcks von Würtemberg, E. Ödling, J. Malmquist, M. Hammar, J. Berggren

    págs. 4851-4853

    

  • Nanocavity in a silicon waveguide for ultrasensitive nanoparticle detection

    Stefan Preble, Vilson Almeida, Bradley Schmidt, Michal Lipson, Christina Manolatou

    págs. 4854-4856

    

  • Electrical tunable Fabry¿Perot interferometer using a poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) terpolymer

    Dae-Yong Jeong, Q. M. Zhang, Yong-Hong Ye

    págs. 4857-4859

    

  • Bragg gratings in silicon-on-insulator waveguides by focused ion beam milling

    M. Samoc, S. Madden, D. Freeman, V. G. Ta¿eed, D. J. Moss, S. Janz, B. J. Eggleton, D.-X. Xu, B. Luther-Davies

    págs. 4860-4862

    

  • Supercontinuum growth in a highly nonlinear fiber with a low-coherence semiconductor laser diode

    C. Headley, A. K. Abeeluck

    págs. 4863-4865

    

  • Zero dispersion at small group velocities in photonic crystal waveguides

    M. Eich, A. Yu. Petrov

    págs. 4866-4868

    

  • Microdischarge devices with 10 or 30 ¿m square silicon cathode cavities: pd scaling and production of the XeO excimer

    J. Chen, J. G. Eden, C. Liu, S.-J. Park

    págs. 4869-4871

    

  • Low energy electron cooling induced by a magnetic field in high pressure capacitive radio frequency discharges

    Hong-Young Chang, S. J. You, S. S. Kim

    págs. 4872-4874

    

  • Production of high-density capacitively coupled radio-frequency discharge plasma by high-secondary-electron-emission oxide

    Yasunori Ohtsu, Hiroharu Fujita

    págs. 4875-4877

    

  • Observation of a manganese acceptor level in ferromagnetic Ga_1-xMn_xN layers

    J. M. Myoung, M. C. Jeong, M. H. Ham, I. T. Yoon, T. W. Kang

    págs. 4878-4880

    

  • Atomic diffusion in liquid Ni, NiP, PdNiP, and PdNiCuP alloys

    S. Mavila Chathoth, F. Juranyi, A. Meyer, M. M. Koza

    págs. 4881-4883

    

  • Hydrogen sorption mechanism of oxidized nickel clusters

    R. J. Westerwaal, A. Borgschulte, R. Griessen, J. H. Rector, B. Dam

    págs. 4884-4886

    

  • Hydrogen adsorption in mesoporous carbons

    Zhiwang Wu, J. Eric Hampsey, Qingyuan Hu, Jiebin Pang, Yunfeng Lu

    págs. 4887-4889

    

  • Effect of growth temperature on morphology, structure and luminescence of Eu-doped GaN thin films

    C. C. Tang, F. F. Xu, Q. L. Liu, Y. Bando

    págs. 4890-4892

    

  • Hydrogen-induced metallization of a preoxidized 3C-SiC(100)3×2 surface

    P. Soukiassian, M. G. Silly, P. Perfetti, P. Moras, S. Gardonio, C. Radtke, H. Enriquez

    págs. 4893-4895

    

  • Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition

    Young-Wook Ko, Jung Wook Lim, Sun Jin Yun

    págs. 4896-4898

    

  • Lattice location and thermal stability of implanted Fe in ZnO

    E. Rita, U. Wahl, E. Alves, J. C. Soares, J. G. Correia

    págs. 4899-4901

    

  • Anomalous energetics and defect-assisted diffusion of Ga in silicon

    Claudio Melis, Vincenzo Fiorentini, Giorgia M. Lopez

    págs. 4902-4904

    

  • Determination of the carrier concentration in InGaAsN/GaAs single quantum wells using Raman scattering

    M. O. Manasreh, Patrick A. Grandt, D. J. Friedman, D. Johnstone, S. Do¿an, Aureus E. Griffith

    págs. 4905-4907

    

  • Determination of composition and strain field of a III/V quaternary quantum dot system

    L. Müller-Kirsch, A. Rosenauer, R. Otto, I. Häusler, H. Kirmse, W. Neumann, D. Bimberg

    págs. 4908-4910

    

  • Superhigh strength and good soft-magnetic properties of (Fe,Co)¿B¿Si¿Nb bulk glassy alloys with high glass-forming ability

    Baolong Shen, Chuntao Chang, Akihisa Inoue

    págs. 4911-4913

    

  • Metastable phase formation during ¿₂(D0₁₉) to ¿(L1₀) transformation in as-atomized ¿-TiAl alloy powders

    P. I. Gouma, M. Karadge

    págs. 4914-4916

    

  • Electrostatic field-induced surface instability

    Danxu Du, David Srolovitz

    págs. 4917-4919