Compel: International journal for computation and mathematics in electrical and electronic engineering

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  Año 1996, Vol. 15, Número 3. Texto Completo Ejemplar

  • Simulation of the hydrodynamic model of semiconductor devices by a finite element method

    Michel Fortin, Geng Yang

    • Resumen
    • Texto completo

    págs. 4-21

    

  • A theoretical study of charge iteration

    Giovanni Aiello, S. Alfonzetti, Salvatore Coco, Nunzio Salerno

    • Resumen
    • Texto completo

    págs. 22-46

    

  • Noise parameters of HEMTs: analysis of their properties from a circuit model approach

    A. Caddemi, M. Sannino

    • Resumen
    • Texto completo

    págs. 47-57

    

  • Simulation of electron states in quantum wires with mixed finite elements

    S. Lepaul, Frédéric Bouillaul, A. De Lustrac

    • Resumen
    • Texto completo

    págs. 58-69

    

  • Direct finite element solution for the capacitance, conductance or inductance, and force in linear electrostatic and magnetostatic problems

    D.M. Spink

    • Resumen
    • Texto completo

    págs. 70-84