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Simulation of electron states in quantum wires with mixed finite elements

    1. [1] University of Paris-Sud

      University of Paris-Sud

      Arrondissement de Palaiseau, Francia

  • Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 15, Nº 3, 1996, págs. 58-69
  • Idioma: inglés
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  • Resumen
    • Recent advances in the fabrication technology of heterojunction semiconductor nanostructures have made possible the realization of systems with extremely small sizes. In these devices, electrons are confined along some directions and are free to move in others. Semiconductor nanostructures have become so small that we have to take into account quantum effects. The two dimensional physical model consists of Poisson’s equation for the electrostatic potential φ, coupled with an eigenvalue problem for Schrödinger’s equation. Proposes.


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