IEE Proceedings: Circuits, devices and systems

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  Año 2003, Vol. 150, Número 4

  • Advances in elevated diode technologies for integrated circuits: progress towards monolithic instruments (Invited paper)

    J. A. Theil

    págs. 235-249

    

  • New materials and processes for flat panel X-ray detectors (Invited paper)

    R. A. Street

    págs. 250-257

    

  • Direct conversion X-ray sensors: sensitivity, DQE and MTF

    M. Z. Kabir, S. O. Kasap

    págs. 258-266

    

  • X-ray detector with on-pixel amplification for large area diagnostic medical imaging

    K. S. Karim

    págs. 267-273

    

  • Tritiated amorphous silicon betavoltaic devices

    T. Kosteski, N. P. Kherani

    págs. 274-281

    

  • Thin film silicon materials and solar cells grown by pulsed PECVD technique

    E. Centurioni, S. Morrison, U. Das

    págs. 282-286

    

  • Thin film polycrystalline silicon solar cell on ceramics with a seeding layer formed via aluminium-induced crystallisation of amorphous silicon

    G. Beaucarne, M. Stoger, C. Ornaghi, J. Poortmans, P. Schattschneider

    págs. 287-292

    

  • Microcrystalline and polycrystalline silicon films for solar cells obtained by gas-jet electron-beam PECVD method

    R. Sharafutdinov, J. Poortmans, R. Bilyalov

    págs. 293-299

    

  • Stability of microcrystalline silicon for thin film solar cell applications

    R. Carius, F. Finger

    págs. 300-308

    

  • Recombination in silicon thin-film solar cells: a study of electrically detected magnetic resonance

    K. Lips, C. Boehme

    págs. 309-315

    

  • Microcrystalline Si:H solar cells fabricated using ECR plasma deposition

    V. L. Dalal

    págs. 316-321

    

  • Design considerations for active matrix organic light emitting diode arrays

    K. Sakariya, A. Kumar

    págs. 322-328

    

  • Thin film transistor integration on glass and plastic substrates in amorphous silicon technology

    D. Striakhilev, K. S. Karim, A. Nathan, P. Servati

    págs. 329-338

    

  • Nanocrystalline silicon thin film transistors

    I. C. Cheng

    págs. 339-344

    

  • 1/f noise in hydrogenated amorphous silicon-germanium alloys

    R. E. Johanson

    págs. 345-349

    

  • Design of a-Si:H/GaAs heterojunction bipolar transistors with improved DC and AC characteristics

    F. Pezzimenti, F. G. D. Corte

    págs. 350-354

    

  • Study of electroluminescence in porous silicon for sensing applications

    A. Tsargorodskaya

    págs. 355-360

    

  • Radiation-induced changes in thin film structures

    K. Arshak, O. Korostynska

    págs. 361-366

    

  • Formation of nanocomposite Langmuir-Blodgett alternate multilayers

    R. Capan, A. K. Hassan

    págs. 367-371